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MOSFETs PMCPB5530X,115
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PMCPB5530X,115
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| SVHC | Yes |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | Unknown |
| PCB changed | 6 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Dual |
| Package Width | 2.1(Max) |
| Package Height | 0.61(Max) |
| Package Length | 2.1(Max) |
| Product Category | Small Signal |
| Supplier Package | HUSON EP |
| Maximum IDSS (uA) | 1 |
| Process Technology | TMOS |
| Typical Fall Time (ns) | 16 |
| Typical Rise Time (ns) | 15@N Channel|14@P Channel |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 1170 |
| Typical Gate Charge @ Vgs (nC) | 14.4@4.5V@N Channel|8.1@5V@P Channel |
| Maximum Gate Source Voltage (V) | 12 |
| Typical Turn-On Delay Time (ns) | 4 |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 40 |
| Maximum Gate Threshold Voltage (V) | 0.9 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 4 |
| Typical Input Capacitance @ Vds (pF) | 660@10V@N Channel|785@10V@P Channel |
| Maximum Drain Source Resistance (mOhm) | 34@4.5V@N Channel|70@4.5V@P Channel |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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