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IRF5810TR
IRF5810TR
MOSFETs IRF5810TR
Infineon
IRF5810TR
--
Diodes, Transistors and Thyristors
MOSFETs
IRF5810TR.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
PCB changed6
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationDual
Package Width1.75(Max)
Package Height1.3(Max)
Package Length3(Max)
Product CategoryPower MOSFET
Supplier PackageTSOP
Process TechnologyHEXFET
Standard Package NameSOP
Typical Fall Time (ns)53
Typical Rise Time (ns)14
Number of Elements per Chip2
Maximum Power Dissipation (mW)960
Typical Gate Charge @ Vgs (nC)6.4@4.5V
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)8.2
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)62
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.9
Typical Input Capacitance @ Vds (pF)650@16V
Maximum Drain Source Resistance (mOhm)90@4.5V
Description
Trans MOSFET P-CH Si 20V 2.9A 6-Pin TSOP T/R
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