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IRF6648
IRF6648
MOSFETs IRF6648
Infineon
IRF6648
--
Diodes, Transistors and Thyristors
MOSFETs
IRF6648.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count7
AutomotiveNo
Lead ShapeNo Lead
PCB changed7
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Dual Source
Package Width5.05(Max)
Package Height0.53(Max)
Package Length5.45(Max)
Product CategoryPower MOSFET
Supplier PackageDirect-FET MN
Process TechnologyDirectFET
Typical Fall Time (ns)13
Typical Rise Time (ns)29
Number of Elements per Chip1
Maximum Power Dissipation (mW)2800
Typical Gate Charge @ 10V (nC)36
Typical Gate Charge @ Vgs (nC)36@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)16
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)28
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Continuous Drain Current (A)86
Typical Input Capacitance @ Vds (pF)2120@25V
Maximum Drain Source Resistance (MOhm)7@10V
Description
Trans MOSFET N-CH Si 60V 86A 7-Pin Direct-FET MN T/R
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