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IRF7506PBF
IRF7506PBF
MOSFETs IRF7506PBF
Infineon
IRF7506PBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRF7506PBF.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationDual Dual Drain
Package Width3
Package Height0.86
Package Length3
Product CategoryPower MOSFET
Supplier PackageMicro
Process TechnologyHEXFET
Typical Fall Time (ns)9.3
Typical Rise Time (ns)12
Number of Elements per Chip2
Maximum Power Dissipation (mW)1250
Typical Gate Charge @ 10V (nC)7.5
Typical Gate Charge @ Vgs (nC)7.5@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)9.7
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)19
Maximum Gate Threshold Voltage (V)1(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)1.7
Typical Input Capacitance @ Vds (pF)180@25V
Maximum Drain Source Resistance (MOhm)270@10V
Description
Trans MOSFET P-CH Si 30V 1.7A 8-Pin Micro T/R
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