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IRF7707TRPBF
IRF7707TRPBF
MOSFETs IRF7707TRPBF
Infineon
IRF7707TRPBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRF7707TRPBF.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Triple Drain Quad Source
Package Width4.4
Package Height1
Package Length3
Product CategoryPower MOSFET
Supplier PackageTSSOP
Process TechnologyHEXFET
Standard Package NameSOP
Typical Fall Time (ns)138
Typical Rise Time (ns)54
Number of Elements per Chip1
Maximum Power Dissipation (mW)1500
Typical Gate Charge @ Vgs (nC)31@4.5V
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)11
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)134
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)7
Typical Input Capacitance @ Vds (pF)2361@15V
Maximum Drain Source Resistance (MOhm)22@4.5V
Description
Trans MOSFET P-CH Si 20V 7A 8-Pin TSSOP T/R
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