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IRFB4212PBF
IRFB4212PBF
MOSFETs IRFB4212PBF
Infineon
IRFB4212PBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRFB4212PBF.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.82(Max)
Package Height9.02(Max)
Package Length10.66(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Standard Package NameTO-220
Typical Fall Time (ns)3.9
Typical Rise Time (ns)28
Number of Elements per Chip1
Maximum Power Dissipation (mW)60000
Typical Gate Charge @ 10V (nC)15
Typical Gate Charge @ Vgs (nC)15@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)7.7
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)14
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)18
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)550@50V
Maximum Drain Source Resistance (mOhm)72.5@10V
Description
Trans MOSFET N-CH Si 100V 18A 3-Pin(3+Tab) TO-220AB Tube
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