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IRFD014PBF
IRFD014PBF
MOSFETs IRFD014PBF
Vishay
IRFD014PBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRFD014PBF.pdf
Specification
Product AttributeAttribute Value
HTS8541.10.00.80
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count4
AutomotiveNo
Lead ShapeThrough Hole
PCB changed4
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Drain
Package Width6.29(Max)
Package Height3.37(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageHVMDIP
Standard Package NameDIP
Typical Fall Time (ns)19
Typical Rise Time (ns)50
Number of Elements per Chip1
Maximum Power Dissipation (mW)1300
Typical Gate Charge @ 10V (nC)11(Max)
Typical Gate Charge @ Vgs (nC)11(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)160
Typical Turn-On Delay Time (ns)10
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)13
Typical Gate to Drain Charge (nC)5.8(Max)
Maximum Gate Threshold Voltage (V)4
Typical Gate to Source Charge (nC)3.1(Max)
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)1.7
Typical Input Capacitance @ Vds (pF)310@25V
Typical Reverse Recovery Charge (nC)200
Maximum Drain Source Resistance (mOhm)200@10V
Description
Trans MOSFET N-CH 60V 1.7A 4-Pin HVMDIP
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