Product Attribute | Attribute Value |
HTS | 8541.10.00.80 |
PPAP | No |
EU RoHS | Compliant |
Mounting | Through Hole |
ECCN (US) | EAR99 |
Pin Count | 4 |
Automotive | No |
Lead Shape | Through Hole |
PCB changed | 4 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Dual Drain |
Package Width | 6.29(Max) |
Package Height | 3.37(Max) |
Package Length | 5(Max) |
Product Category | Power MOSFET |
Supplier Package | HVMDIP |
Standard Package Name | DIP |
Typical Fall Time (ns) | 19 |
Typical Rise Time (ns) | 50 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 1300 |
Typical Gate Charge @ 10V (nC) | 11(Max) |
Typical Gate Charge @ Vgs (nC) | 11(Max)@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Output Capacitance (pF) | 160 |
Typical Turn-On Delay Time (ns) | 10 |
Maximum Drain Source Voltage (V) | 60 |
Typical Turn-Off Delay Time (ns) | 13 |
Typical Gate to Drain Charge (nC) | 5.8(Max) |
Maximum Gate Threshold Voltage (V) | 4 |
Typical Gate to Source Charge (nC) | 3.1(Max) |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 1.7 |
Typical Input Capacitance @ Vds (pF) | 310@25V |
Typical Reverse Recovery Charge (nC) | 200 |
Maximum Drain Source Resistance (mOhm) | 200@10V |
Description |