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IRFD110PBF
IRFD110PBF
MOSFETs IRFD110PBF
Vishay
IRFD110PBF
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Diodes, Transistors and Thyristors
MOSFETs
IRFD110PBF.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count4
AutomotiveNo
Lead ShapeThrough Hole
PCB changed4
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Drain
Package Width6.29(Max)
Package Height3.37(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageHVMDIP
Maximum IDSS (uA)25
Standard Package NameDIP
Typical Fall Time (ns)9.4
Typical Rise Time (ns)16
Number of Elements per Chip1
Maximum Power Dissipation (mW)1300
Typical Gate Charge @ 10V (nC)8.3(Max)
Typical Gate Charge @ Vgs (nC)8.3(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)81
Typical Turn-On Delay Time (ns)6.9
Maximum Drain Source Voltage (V)100
Typical Gate Plateau Voltage (V)7
Typical Turn-Off Delay Time (ns)15
Maximum Diode Forward Voltage (V)2.5
Typical Gate to Drain Charge (nC)3.8(Max)
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)2.3(Max)
Typical Reverse Recovery Time (ns)100
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)1
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)180@25V
Typical Reverse Recovery Charge (nC)440
Maximum Drain Source Resistance (mOhm)540@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)8
Typical Reverse Transfer Capacitance @ Vds (pF)15@25V
Description
Trans MOSFET N-CH 100V 1A 4-Pin HVMDIP
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