HTS | 8541.10.00.80 |
Tab | Tab |
PPAP | No |
EU RoHS | Compliant |
Mounting | Through Hole |
ECCN (US) | EAR99 |
Pin Count | 3 |
Automotive | No |
Lead Shape | Through Hole |
PCB changed | 3 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | P |
Configuration | Single |
Package Width | 4.83(Max) |
Package Height | 16.12(Max) |
Package Length | 10.63(Max) |
Product Category | Power MOSFET |
Supplier Package | TO-220FP |
Maximum IDSS (uA) | 25 |
Standard Package Name | TO-220 |
Typical Fall Time (ns) | 21 |
Typical Rise Time (ns) | 23 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 35000 |
Typical Gate Charge @ 10V (nC) | 38(Max) |
Typical Gate Charge @ Vgs (nC) | 38(Max)@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Output Capacitance (pF) | 170 |
Typical Turn-On Delay Time (ns) | 12 |
Maximum Drain Source Voltage (V) | 250 |
Typical Gate Plateau Voltage (V) | 5.7 |
Typical Turn-Off Delay Time (ns) | 34 |
Maximum Diode Forward Voltage (V) | 6.5 |
Typical Gate to Drain Charge (nC) | 18(Max) |
Maximum Gate Threshold Voltage (V) | 4 |
Minimum Gate Threshold Voltage (V) | 2 |
Typical Gate to Source Charge (nC) | 8(Max) |
Typical Reverse Recovery Time (ns) | 190 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 4.1 |
Operating Junction Temperature (°C) | -55 to 150 |
Typical Input Capacitance @ Vds (pF) | 680@25V |
Typical Reverse Recovery Charge (nC) | 1500 |
Maximum Drain Source Resistance (mOhm) | 1000@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 16 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 40@25V |
Description | |