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IRFI9634GPBF
IRFI9634GPBF
MOSFETs IRFI9634GPBF
Vishay
IRFI9634GPBF
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Diodes, Transistors and Thyristors
MOSFETs
IRFI9634GPBF.pdf
Specification
Product AttributeAttribute Value
HTS8541.10.00.80
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width4.83(Max)
Package Height16.12(Max)
Package Length10.63(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220FP
Maximum IDSS (uA)25
Standard Package NameTO-220
Typical Fall Time (ns)21
Typical Rise Time (ns)23
Number of Elements per Chip1
Maximum Power Dissipation (mW)35000
Typical Gate Charge @ 10V (nC)38(Max)
Typical Gate Charge @ Vgs (nC)38(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)170
Typical Turn-On Delay Time (ns)12
Maximum Drain Source Voltage (V)250
Typical Gate Plateau Voltage (V)5.7
Typical Turn-Off Delay Time (ns)34
Maximum Diode Forward Voltage (V)6.5
Typical Gate to Drain Charge (nC)18(Max)
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)8(Max)
Typical Reverse Recovery Time (ns)190
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4.1
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)680@25V
Typical Reverse Recovery Charge (nC)1500
Maximum Drain Source Resistance (mOhm)1000@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)16
Typical Reverse Transfer Capacitance @ Vds (pF)40@25V
Description
Trans MOSFET P-CH 250V 4.1A 3-Pin(3+Tab) TO-220FP
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