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IRHLNM77110
IRHLNM77110
MOSFETs IRHLNM77110
Infineon
IRHLNM77110
--
Diodes, Transistors and Thyristors
MOSFETs
IRHLNM77110.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
ECCN (US)Contact Export
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5.74(Max)
Package Height2.69(Max)
Package Length8.15(Max)
Product CategoryPower MOSFET
Supplier PackageSMD-0.2
Typical Fall Time (ns)12(Max)
Typical Rise Time (ns)75(Max)
Number of Elements per Chip1
Maximum Power Dissipation (mW)23200
Typical Gate Charge @ Vgs (nC)11(Max)@4.5V
Maximum Gate Source Voltage (V)±10
Typical Turn-On Delay Time (ns)18(Max)
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)50(Max)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6.5
Typical Input Capacitance @ Vds (pF)572@25V
Maximum Drain Source Resistance (MOhm)290@4.5V
Description
Trans MOSFET N-CH 100V 6.5A 3-Pin SMD-0.2
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