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IRLW630ATM
IRLW630ATM
MOSFETs IRLW630ATM
onsemi
IRLW630ATM
--
Diodes, Transistors and Thyristors
MOSFETs
IRLW630ATM.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.2
Package Height4.5
Package Length9.9
Product CategoryPower MOSFET
Supplier PackageD2PAK
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)9
Typical Rise Time (ns)6
Number of Elements per Chip1
Maximum Power Dissipation (mW)3100
Typical Gate Charge @ Vgs (nC)18.6@5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)8
Maximum Drain Source Voltage (V)200
Typical Turn-Off Delay Time (ns)30
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)9
Typical Input Capacitance @ Vds (pF)580@25V
Maximum Drain Source Resistance (mOhm)400@5V
Description
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK T/R
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