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NTJD4152PT1G
NTJD4152PT1G
MOSFETs NTJD4152PT1G
onsemi
NTJD4152PT1G
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Diodes, Transistors and Thyristors
MOSFETs
NTJD4152PT1G.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationDual
Package Width1.25
Package Height0.9
Package Length2
Product CategorySmall Signal
Supplier PackageSC-88
Maximum IDSS (uA)1
Process TechnologyTMOS
Standard Package NameSC
Typical Fall Time (ns)3.5
Typical Rise Time (ns)6.5
Number of Elements per Chip2
Maximum Power Dissipation (mW)272
Typical Gate Charge @ Vgs (nC)2.2@4.5V
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)5.8
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)13.5
Maximum Diode Forward Voltage (V)1.2
Maximum Gate Threshold Voltage (V)1.2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.88
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)155@20V
Maximum Drain Source Resistance (mOhm)260@4.5V
Maximum Gate Source Leakage Current (nA)1000
Maximum Positive Gate Source Voltage (V)12
Description
Trans MOSFET P-CH 20V 0.88A 6-Pin SC-88 T/R
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