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MOSFETs NTMD5836NLR2G
onsemi
NTMD5836NLR2G
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 8 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual |
| Package Width | 4(Max) |
| Package Height | 1.5(Max) |
| Package Length | 5(Max) |
| Product Category | Power MOSFET |
| Supplier Package | SOIC N |
| Maximum IDSS (uA) | 1 |
| Standard Package Name | SOP |
| Typical Fall Time (ns) | 8.5@Channel 1|3.5@Channel 2 |
| Typical Rise Time (ns) | 22@Channel 1|14@Channel 2 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 2100@Channel 1|1900@Channel 2 |
| Typical Gate Charge @ 10V (nC) | 36@Channel 1|16@Channel 2 |
| Typical Gate Charge @ Vgs (nC) | 15@4.5V@Channel 1|36@10V|16@10V|8.5@4.5V@Channel 2 |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 11.5@Channel 2|16@Channel 1 |
| Maximum Drain Source Voltage (V) | 40 |
| Typical Turn-Off Delay Time (ns) | 26@Channel 1|15.5@Channel 2 |
| Maximum Gate Threshold Voltage (V) | 3 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 5.7@Channel 2|9@Channel 1 |
| Typical Input Capacitance @ Vds (pF) | 730@20V@Channel 2|2120@20V@Channel 1 |
| Maximum Drain Source Resistance (MOhm) | 12@10V@Channel 1|20@10V@Channel 2 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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