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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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NTMFS4C09NT1G-001
NTMFS4C09NT1G-001
MOSFETs NTMFS4C09NT1G-001
onsemi
NTMFS4C09NT1G-001
--
Diodes, Transistors and Thyristors
MOSFETs
NTMFS4C09NT1G-001.pdf
Specification
Product AttributeAttribute Value
SVHCYes
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTape and Reel
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Product CategoryPower MOSFET
Maximum IDSS (uA)1
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)6|4
Typical Rise Time (ns)28|32
Number of Elements per Chip1
Maximum Power Dissipation (mW)2510
Typical Gate Charge @ 10V (nC)22.2
Typical Gate Charge @ Vgs (nC)22.2@10V|10.9@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)10|7
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)16|20
Maximum Gate Threshold Voltage (V)2.1
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)16.4
Typical Input Capacitance @ Vds (pF)1252@15V
Maximum Drain Source Resistance (MOhm)5.8@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 30V 16.4A 5-Pin(4+Tab) SO-FL T/R
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