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NTMS5835NLR2G
NTMS5835NLR2G
MOSFETs NTMS5835NLR2G
onsemi
NTMS5835NLR2G
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4(Max)
Package Height1.5(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC N
Standard Package NameSOP
Typical Fall Time (ns)9
Typical Rise Time (ns)45
Number of Elements per Chip1
Maximum Power Dissipation (mW)2600
Typical Gate Charge @ 10V (nC)40
Typical Gate Charge @ Vgs (nC)20@4.5V|40@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)15
Maximum Drain Source Voltage (V)40
Typical Turn-Off Delay Time (ns)22
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)9.2
Typical Input Capacitance @ Vds (pF)2115@20V
Maximum Drain Source Resistance (MOhm)10@10V
Description
Trans MOSFET N-CH 40V 9.2A 8-Pin SOIC N T/R
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