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NVMTS0D7N06CLTXG
NVMTS0D7N06CLTXG
MOSFETs NVMTS0D7N06CLTXG
onsemi
NVMTS0D7N06CLTXG
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPYes
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveYes
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width7.9
Package Height1.15(Max)
Package Length8
Product CategoryPower MOSFET
Supplier PackageDFNW EP
Maximum IDSS (uA)10
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)60.7
Typical Rise Time (ns)26.3
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)5000
Typical Gate Charge @ 10V (nC)225
Typical Gate Charge @ Vgs (nC)103@4.5V|225@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)35.3
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)263
Maximum Gate Threshold Voltage (V)2.5
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)62.2
Typical Input Capacitance @ Vds (pF)16200@25V
Maximum Drain Source Resistance (mOhm)0.68@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 60V 62.2A Automotive 8-Pin DFNW EP T/R
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