Product Attribute | Attribute Value |
EU RoHS | Compliant |
Material | SiC |
ECCN (US) | EAR99 |
Packaging | Tray |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Dual |
Product Category | Power MOSFET |
Typical Fall Time (ns) | 11.9 |
Typical Rise Time (ns) | 16.5 |
Number of Elements per Chip | 2 |
Maximum Power Dissipation (mW) | 328000 |
Typical Gate Charge @ Vgs (nC) | 546.4@15V |
Maximum Gate Source Voltage (V) | 18 |
Typical Turn-On Delay Time (ns) | 61.2 |
Maximum Drain Source Voltage (V) | 900 |
Typical Turn-Off Delay Time (ns) | 148 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -40 |
Maximum Continuous Drain Current (A) | 154 |
Operating Junction Temperature (°C) | -40 to 175 |
Typical Input Capacitance @ Vds (pF) | 7007@450V |
Maximum Drain Source Resistance (mOhm) | 14@15V |
Description |