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PSMN009-100W,127
PSMN009-100W,127
MOSFETs PSMN009-100W,127
NXP
PSMN009-100W,127
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSSupplier Unconfirmed
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingRail
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5.2(Max)
Package Height20.6(Max)
Package Length15.75(Max)
Product CategoryPower MOSFET
Supplier PackageTO-247
Typical Fall Time (ns)100
Typical Rise Time (ns)100
Number of Elements per Chip1
Maximum Power Dissipation (mW)300000
Typical Gate Charge @ 10V (nC)214
Typical Gate Charge @ Vgs (nC)214@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)40
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)260
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)100
Typical Input Capacitance @ Vds (pF)9000@25V
Maximum Drain Source Resistance (MOhm)9@10V
Description
Trans MOSFET N-CH Si 100V 100A 3-Pin(3+Tab) TO-247 Rail
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