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RFD3055LESM
RFD3055LESM
MOSFETs RFD3055LESM
onsemi
RFD3055LESM
--
Diodes, Transistors and Thyristors
MOSFETs
RFD3055LESM.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingRail
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.39(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)1
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)39
Typical Rise Time (ns)105
Number of Elements per Chip1
Maximum Power Dissipation (mW)38000
Typical Gate Charge @ 10V (nC)9.4
Typical Gate Charge @ Vgs (nC)9.4@10V
Maximum Gate Source Voltage (V)±16
Typical Turn-On Delay Time (ns)8
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)22
Maximum Gate Threshold Voltage (V)3
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)11
Typical Input Capacitance @ Vds (pF)350@25V
Maximum Drain Source Resistance (mOhm)107@5V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH Si 60V 11A 3-Pin(2+Tab) DPAK Rail
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