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MOSFETs SCTWA50N120-4
STMicroelectronics
SCTWA50N120-4
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MaterialSiC
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count4
AutomotiveNo
PCB changed4
Part StatusLTB
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5
Package Height21
Package Length15.8
Product CategoryPower MOSFET
Supplier PackageHIP-247
Number of Elements per Chip1
Maximum Power Dissipation (mW)318000
Typical Gate Charge @ Vgs (nC)122@20V
Maximum Gate Source Voltage (V)25
Maximum Drain Source Voltage (V)1200
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)65
Typical Input Capacitance @ Vds (pF)1900@400V
Maximum Drain Source Resistance (mOhm)69@20V
Description
Trans MOSFET N-CH SiC 1.2KV 65A 4-Pin(4+Tab) HIP-247 Tube
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