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SQD50N10-8M9L_GE3
SQD50N10-8M9L_GE3
MOSFETs SQD50N10-8M9L_GE3
Vishay
SQD50N10-8M9L_GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPUnknown
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveYes
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.38(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageTO-252AA
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Typical Fall Time (ns)120
Typical Rise Time (ns)12
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)136000
Typical Gate Charge @ 10V (nC)46
Typical Gate Charge @ Vgs (nC)46@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)12
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)95
Maximum Gate Threshold Voltage (V)2.5
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)50
Typical Input Capacitance @ Vds (pF)2340@25V
Maximum Drain Source Resistance (mOhm)8.9@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 100V 50A 3-Pin(2+Tab) TO-252AA
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