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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SI1016CX-T1-GE3
SI1016CX-T1-GE3
MOSFETs SI1016CX-T1-GE3
Vishay
SI1016CX-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SI1016CX-T1-GE3.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual
Package Width1.2
Package Height0.6(Max)
Package Length1.7(Max)
Product CategoryPower MOSFET
Supplier PackageSC-89
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Standard Package NameSC
Typical Fall Time (ns)11@N Channel|8@P Channel
Typical Rise Time (ns)16@N Channel|10@P Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)220
Typical Gate Charge @ Vgs (nC)1.3@4.5V|0.75@2.5V@N Channel|1.65@4.5V|1@2.5V@P Channel
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)11@N Channel|9@P Channel
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)26@N Channel|10@P Channel
Maximum Gate Threshold Voltage (V)1
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.6
Typical Input Capacitance @ Vds (pF)43@10V@N Channel|45@10V@P Channel
Maximum Drain Source Resistance (MOhm)396@4.5V@N Channel|756@4.5V@P Channel
Maximum Gate Source Leakage Current (nA)1000
Description
Trans MOSFET N/P-CH 20V 0.6A 6-Pin SC-89 T/R
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