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SI1563EDH-T1-GE3
SI1563EDH-T1-GE3
MOSFETs SI1563EDH-T1-GE3
Vishay
SI1563EDH-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeGull-wing
PCB changed6
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual
Package Width1.25
Package Height1(Max)
Package Length2
Product CategoryPower MOSFET
Supplier PackageSC-70
Standard Package NameSOT
Typical Fall Time (ns)210@N Channel|850@P Channel
Typical Rise Time (ns)85@N Channel|480@P Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)740@N Channel|570@P Channel
Typical Gate Charge @ Vgs (nC)0.65@4.5V@N Channel|1.2@4.5V@P Channel
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)45@N Channel|150@P Channel
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)350@N Channel|840@P Channel
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)1.13@N Channel|0.88@P Channel
Maximum Drain Source Resistance (MOhm)280@4.5V@N Channel|490@4.5V@P Channel
Description
Trans MOSFET N/P-CH 20V 1.13A/0.88A 6-Pin SC-70 T/R
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