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MOSFETs SI4511DY-T1-GE3
Vishay
SI4511DY-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 8 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | P|N |
| Configuration | Dual Dual Drain |
| Package Width | 4(Max) |
| Package Height | 1.55(Max) |
| Package Length | 5(Max) |
| Product Category | Power MOSFET |
| Supplier Package | SOIC N |
| Maximum IDSS (uA) | 1 |
| Process Technology | TrenchFET |
| Standard Package Name | SOP |
| Typical Fall Time (ns) | 50@P Channel|15@N Channel |
| Typical Rise Time (ns) | 30@P Channel|12@N Channel |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 2000 |
| Typical Gate Charge @ Vgs (nC) | 17@4.5V@P Channel|11.5@4.5V@N Channel |
| Maximum Gate Source Voltage (V) | ±12@P Channel|±16@N Channel |
| Typical Output Capacitance (pF) | 450@P Channel|399@N Channel |
| Typical Turn-On Delay Time (ns) | 25@P Channel|12@N Channel |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Gate Plateau Voltage (V) | 1.9@P Channel|2.5@N Channel |
| Typical Turn-Off Delay Time (ns) | 70@P Channel|55@N Channel |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Diode Forward Voltage (V) | 0.8 |
| Typical Gate to Drain Charge (nC) | 4.3@P Channel|3.3@N Channel |
| Maximum Gate Threshold Voltage (V) | 1.4@P Channel|1.8@N Channel |
| Minimum Gate Threshold Voltage (V) | 0.6 |
| Typical Gate to Source Charge (nC) | 4.1@P Channel|3.7@N Channel |
| Typical Reverse Recovery Time (ns) | 40@P Channel|50@N Channel |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 4.6@P Channel|7.2@N Channel |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Drain Source Resistance (mOhm) | 33@4.5V@P Channel|14.5@10V@N Channel |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 12|16 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 40 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 2 |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 6.2@P Channel|9.6@N Channel |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 110 |
| Description |
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