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SI4900DY-T1-GE3
SI4900DY-T1-GE3
MOSFETs SI4900DY-T1-GE3
Vishay
SI4900DY-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
ConfigurationDual Dual Drain
Package Width4(Max)
Package Height1.55(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC N
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Standard Package NameSOP
Typical Fall Time (ns)10
Typical Rise Time (ns)15|65
Number of Elements per Chip2
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ 10V (nC)13
Typical Gate Charge @ Vgs (nC)13@10V|6@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)10|15
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)15|20
Maximum Gate Threshold Voltage (V)3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4.3
Typical Input Capacitance @ Vds (pF)665@15V
Maximum Drain Source Resistance (mOhm)58@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R
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