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MOSFETs SI7686DP-T1-GE3
Vishay
SI7686DP-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | No Lead |
| PCB changed | 8 |
| Part Status | NRND |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 5.89 |
| Package Height | 1.07(Max) |
| Package Length | 4.9 |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAK SO EP |
| Process Technology | TrenchFET |
| Typical Fall Time (ns) | 8 |
| Typical Rise Time (ns) | 20|16 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 5000 |
| Typical Gate Charge @ 10V (nC) | 17 |
| Typical Gate Charge @ Vgs (nC) | 9.2@5V|17@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 230 |
| Typical Turn-On Delay Time (ns) | 20|13 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 20|23 |
| Typical Gate to Drain Charge (nC) | 2.8 |
| Maximum Gate Threshold Voltage (V) | 3 |
| Typical Gate to Source Charge (nC) | 4.1 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 17.9 |
| Typical Input Capacitance @ Vds (pF) | 1220@15V |
| Typical Reverse Recovery Charge (nC) | 15 |
| Maximum Drain Source Resistance (mOhm) | 9.5@10V |
| Description |
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