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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SI7923DN-T1-GE3
SI7923DN-T1-GE3
MOSFETs SI7923DN-T1-GE3
Vishay
SI7923DN-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SI7923DN-T1-GE3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationDual Dual Drain
Package Width3.05
Package Height1.07(Max)
Package Length3.05
Product CategoryPower MOSFET
Supplier PackagePowerPAK 1212
Process TechnologyTrenchFET
Standard Package NamePowerPAK 1212
Typical Fall Time (ns)28
Typical Rise Time (ns)12
Number of Elements per Chip2
Maximum Power Dissipation (mW)1300
Typical Gate Charge @ 10V (nC)14
Typical Gate Charge @ Vgs (nC)14@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)10
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)38
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4.3
Maximum Drain Source Resistance (MOhm)47@10V
Description
Trans MOSFET P-CH 30V 4.3A 8-Pin PowerPAK 1212 T/R
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