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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SI7945DP-T1-GE3
SI7945DP-T1-GE3
MOSFETs SI7945DP-T1-GE3
Vishay
SI7945DP-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SI7945DP-T1-GE3.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationDual Dual Drain
Package Width5.89
Package Height1.07(Max)
Package Length4.9
Product CategoryPower MOSFET
Supplier PackagePowerPAK SO EP
Process TechnologyTrenchFET
Typical Fall Time (ns)80
Typical Rise Time (ns)15
Number of Elements per Chip2
Maximum Power Dissipation (mW)3500
Typical Gate Charge @ 10V (nC)49
Typical Gate Charge @ Vgs (nC)49@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)15
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)130
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)7
Maximum Drain Source Resistance (mOhm)20@10V
Description
Trans MOSFET P-CH 30V 7A 8-Pin PowerPAK SO EP T/R
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