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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SIA950DJ-T1-GE3
SIA950DJ-T1-GE3
MOSFETs SIA950DJ-T1-GE3
Vishay
SIA950DJ-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SIA950DJ-T1-GE3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
PCB changed6
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width2.05
Package Height0.75
Package Length2.05
Product CategoryPower MOSFET
Supplier PackagePowerPAK SC-70
Typical Fall Time (ns)15
Typical Rise Time (ns)15
Number of Elements per Chip2
Maximum Power Dissipation (mW)1900
Typical Gate Charge @ 10V (nC)3
Typical Gate Charge @ Vgs (nC)3@10V|1.4@4.5V
Maximum Gate Source Voltage (V)±16
Typical Turn-On Delay Time (ns)10
Maximum Drain Source Voltage (V)190
Typical Turn-Off Delay Time (ns)25
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.47
Typical Input Capacitance @ Vds (pF)90@100V
Maximum Drain Source Resistance (mOhm)3800@4.5V
Description
Trans MOSFET N-CH 190V 0.47A 6-Pin PowerPAK SC-70 T/R
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