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SIHD5N50D-E3
SIHD5N50D-E3
MOSFETs SIHD5N50D-E3
Vishay
SIHD5N50D-E3
--
Diodes, Transistors and Thyristors
MOSFETs
SIHD5N50D-E3.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.38(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)1
Standard Package NameTO-252
Typical Fall Time (ns)11
Typical Rise Time (ns)11
Number of Elements per Chip1
Maximum Power Dissipation (mW)104000
Typical Gate Charge @ 10V (nC)10
Typical Gate Charge @ Vgs (nC)10@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)12
Maximum Drain Source Voltage (V)500
Typical Turn-Off Delay Time (ns)14
Maximum Gate Threshold Voltage (V)5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)5.3
Typical Input Capacitance @ Vds (pF)325@100V
Maximum Drain Source Resistance (mOhm)1500@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 500V 5.3A 3-Pin(2+Tab) DPAK
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