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SIJ438DP-T1-GE3
SIJ438DP-T1-GE3
MOSFETs SIJ438DP-T1-GE3
Vishay
SIJ438DP-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
PCB changed4
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Triple Source
Package Width4.37
Package Height1.07
Package Length4.9
Product CategoryPower MOSFET
Supplier PackagePowerPAK SO
Typical Fall Time (ns)17|9
Typical Rise Time (ns)19|98
Number of Elements per Chip1
Maximum Power Dissipation (mW)5000
Typical Gate Charge @ 10V (nC)121
Typical Gate Charge @ Vgs (nC)121@10V|58@4.5V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)16|55
Maximum Drain Source Voltage (V)40
Typical Turn-Off Delay Time (ns)54|47
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)80
Typical Input Capacitance @ Vds (pF)9400@20V
Maximum Drain Source Resistance (mOhm)1.35@10V
Description
Trans MOSFET N-CH 40V 80A 5-Pin(4+Tab) PowerPAK SO T/R
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