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MOSFETs SIJH5800E-T1-GE3
Vishay
SIJH5800E-T1-GE3
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
EU RoHSCompliant
PackagingTape and Reel
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Triple Source
Product CategoryPower MOSFET
Typical Fall Time (ns)27
Typical Rise Time (ns)16|28
Number of Elements per Chip1
Maximum Power Dissipation (mW)3300
Typical Gate Charge @ 10V (nC)103
Typical Gate Charge @ Vgs (nC)103@10V|78@7.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)20|25
Maximum Drain Source Voltage (V)80
Typical Turn-Off Delay Time (ns)53|48
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)30
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)7730@40V
Maximum Drain Source Resistance (mOhm)1.35@10V
Description
Trans MOSFET N-CH 80V 30A T/R
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