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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SIS902DN-T1-GE3
SIS902DN-T1-GE3
MOSFETs SIS902DN-T1-GE3
Vishay
SIS902DN-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SIS902DN-T1-GE3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationDual Dual Drain
Package Width3.05
Package Height1.07(Max)
Package Length3.05
Product CategoryPower MOSFET
Supplier PackagePowerPAK 1212
Process TechnologyTrenchFET
Standard Package NamePowerPAK 1212
Typical Fall Time (ns)9
Typical Rise Time (ns)18
Number of Elements per Chip2
Maximum Power Dissipation (mW)3100
Typical Gate Charge @ 10V (nC)3.9
Typical Gate Charge @ Vgs (nC)3.9@10V|2.1@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)17
Maximum Drain Source Voltage (V)75
Typical Turn-Off Delay Time (ns)12
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4
Typical Input Capacitance @ Vds (pF)175@38V
Maximum Drain Source Resistance (mOhm)186@10V
Description
Trans MOSFET N-CH 75V 4A 8-Pin PowerPAK 1212 T/R
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