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SISA96DN-T1-GE3
SISA96DN-T1-GE3
MOSFETs SISA96DN-T1-GE3
Vishay
SISA96DN-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width3.05
Package Height1.07(Max)
Package Length3.05
Product CategoryPower MOSFET
Supplier PackagePowerPAK 1212 EP
Typical Fall Time (ns)9|25
Typical Rise Time (ns)25|47
Number of Elements per Chip1
Maximum Power Dissipation (mW)3500
Typical Gate Charge @ 10V (nC)20.5
Typical Gate Charge @ Vgs (nC)20.5@10V|9.9@4.5V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)8|12
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)13|15
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)16
Typical Input Capacitance @ Vds (pF)1385@15V
Maximum Drain Source Resistance (mOhm)8.8@10V
Description
Trans MOSFET N-CH 30V 16A 8-Pin PowerPAK 1212 EP T/R
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