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SISF06DN
SISF06DN
MOSFETs SISF06DN
Vishay
SISF06DN
--
Diodes, Transistors and Thyristors
MOSFETs
SISF06DN.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Channel ModeEnhancement
Channel TypeN
ConfigurationDual Dual Source
Package Width3.3
Package Height0.73
Package Length3.3
Product CategoryPower MOSFET
Supplier PackagePowerPAK 1212-SCD EP
Maximum IDSS (uA)1
Process TechnologyTrenchFET Gen IV
Typical Fall Time (ns)20
Typical Rise Time (ns)60
Number of Elements per Chip2
Maximum Power Dissipation (mW)52000
Typical Gate Charge @ 10V (nC)30
Typical Gate Charge @ Vgs (nC)14@4.5V|30@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)30
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)35
Maximum Gate Threshold Voltage (V)2.3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)28
Typical Input Capacitance @ Vds (pF)2050@15V
Maximum Drain Source Resistance (mOhm)4.5@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 30V 28A 8-Pin PowerPAK 1212-SCD EP T/R
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