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SISF20DN
SISF20DN
MOSFETs SISF20DN
Vishay
SISF20DN
--
Diodes, Transistors and Thyristors
MOSFETs
SISF20DN.pdf
Specification
Product AttributeAttribute Value
EU RoHSCompliant
ECCN (US)EAR99
PackagingTape and Reel
Channel ModeEnhancement
Channel TypeN
ConfigurationDual Common Drain
Product CategoryPower MOSFET
Typical Fall Time (ns)7
Typical Rise Time (ns)50
Number of Elements per Chip2
Maximum Power Dissipation (mW)5200
Typical Gate Charge @ 10V (nC)22
Typical Gate Charge @ Vgs (nC)10.2@4.5V|22@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)15
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)24
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)14
Typical Input Capacitance @ Vds (pF)1290@30V
Maximum Drain Source Resistance (mOhm)13@10V
Description
Trans MOSFET N-CH 60V 14A 8-Pin PowerPAK 1212-SCD T/R
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