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MOSFETs SQJ403EEP-T1_GE3
Vishay
SQJ403EEP-T1_GE3
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Automotive | Yes |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Triple Source |
| Product Category | Power MOSFET |
| Typical Fall Time (ns) | 178 |
| Typical Rise Time (ns) | 82 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 68000 |
| Typical Gate Charge @ 10V (nC) | 75 |
| Typical Gate Charge @ Vgs (nC) | 75@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 38 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 134 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 30 |
| Maximum Drain Source Resistance (mOhm) | 8.5@10V |
| Description |
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