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SQJ431AEP-T1_GE3
SQJ431AEP-T1_GE3
MOSFETs SQJ431AEP-T1_GE3
Vishay
SQJ431AEP-T1_GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPUnknown
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count5
AutomotiveYes
PCB changed4
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Triple Source
Package Width4.37
Package Height1.07
Package Length4.9
Product CategoryPower MOSFET
Supplier PackagePowerPAK SO EP
Typical Fall Time (ns)5
Typical Rise Time (ns)5
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)68000
Typical Gate Charge @ 10V (nC)55
Typical Gate Charge @ Vgs (nC)55@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)16
Maximum Drain Source Voltage (V)200
Typical Turn-Off Delay Time (ns)35
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)9.4
Typical Input Capacitance @ Vds (pF)2734@25V
Maximum Drain Source Resistance (mOhm)305@10V
Description
Trans MOSFET P-CH 200V 9.4A Automotive 5-Pin(4+Tab) PowerPAK SO EP
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