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STB36NF06LT4
STB36NF06LT4
MOSFETs STB36NF06LT4
STMicroelectronics
STB36NF06LT4
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Diodes, Transistors and Thyristors
MOSFETs
STB36NF06LT4.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.35(Max)
Package Height4.6(Max)
Package Length10.4(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)1
Process TechnologySTripFET II
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)13
Typical Rise Time (ns)80
Number of Elements per Chip1
Maximum Power Dissipation (mW)70000
Typical Gate Charge @ Vgs (nC)13@5V
Maximum Gate Source Voltage (V)±18
Typical Output Capacitance (pF)170
Typical Turn-On Delay Time (ns)10
Maximum Drain Source Voltage (V)60
Typical Gate Plateau Voltage (V)4.2
Typical Turn-Off Delay Time (ns)19
Maximum Diode Forward Voltage (V)1.5
Typical Gate to Drain Charge (nC)7.8
Maximum Gate Threshold Voltage (V)2.5
Minimum Gate Threshold Voltage (V)1
Typical Gate to Source Charge (nC)4.2
Typical Reverse Recovery Time (ns)55
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)30
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)660@25V
Typical Reverse Recovery Charge (nC)107
Maximum Drain Source Resistance (mOhm)40@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)18
Maximum Pulsed Drain Current @ TC=25°C (A)120
Typical Reverse Transfer Capacitance @ Vds (pF)70@25V
Description
Trans MOSFET N-CH 60V 30A Automotive 3-Pin(2+Tab) D2PAK T/R
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