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STL19N65M5
STL19N65M5
MOSFETs STL19N65M5
STMicroelectronics
STL19N65M5
--
Diodes, Transistors and Thyristors
MOSFETs
STL19N65M5.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
Lead ShapeNo Lead
PCB changed4
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Triple Source
Package Width8
Package Height0.88
Package Length8
Product CategoryPower MOSFET
Supplier PackagePower Flat
Maximum IDSS (uA)1
Process TechnologyMDmesh
Number of Elements per Chip1
Maximum Power Dissipation (mW)2800
Typical Gate Charge @ 10V (nC)31
Typical Gate Charge @ Vgs (nC)31@10V
Maximum Gate Source Voltage (V)±25
Maximum Drain Source Voltage (V)650
Maximum Gate Threshold Voltage (V)5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.3
Typical Input Capacitance @ Vds (pF)1240@100V
Maximum Drain Source Resistance (mOhm)240@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 650V 2.3A 5-Pin(4+Tab) Power Flat T/R
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