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STP16NF06FP
STP16NF06FP
MOSFETs STP16NF06FP
STMicroelectronics
STP16NF06FP
--
Diodes, Transistors and Thyristors
MOSFETs
STP16NF06FP.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.6(Max)
Package Height16.4(Max)
Package Length10.4(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220FP
Maximum IDSS (uA)1
Process TechnologySTripFET II
Standard Package NameTO-220
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)6
Typical Rise Time (ns)18
Number of Elements per Chip1
Maximum Power Dissipation (mW)25000
Typical Gate Charge @ 10V (nC)10
Typical Gate Charge @ Vgs (nC)10@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)70
Typical Turn-On Delay Time (ns)7
Maximum Drain Source Voltage (V)60
Typical Gate Plateau Voltage (V)5.8
Typical Turn-Off Delay Time (ns)17
Maximum Diode Forward Voltage (V)1.3
Typical Gate to Drain Charge (nC)3.5@10V
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)3.5
Typical Reverse Recovery Time (ns)50
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)11
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)315@25V
Typical Reverse Recovery Charge (nC)88
Maximum Drain Source Resistance (MOhm)100@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)44
Typical Reverse Transfer Capacitance @ Vds (pF)30@25V
Description
Trans MOSFET N-CH 60V 11A 3-Pin(3+Tab) TO-220FP Tube
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