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VN 0808M
VN 0808M
MOSFETs VN 0808M
Vishay
VN 0808M
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Diodes, Transistors and Thyristors
MOSFETs
VN 0808M.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSNot Compliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Supplier PackageTO-237
Maximum IDSS (uA)10
Standard Package NameTO-237
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum Gate Source Voltage (V)±30
Typical Output Capacitance (pF)35
Maximum Drain Source Voltage (V)80
Typical Gate Plateau Voltage (V)2.5
Maximum Gate Threshold Voltage (V)2
Minimum Gate Threshold Voltage (V)0.8
Typical Gate Threshold Voltage (V)1.6
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.33
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)35@25V
Maximum Drain Source Resistance (MOhm)4000@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)30
Maximum Pulsed Drain Current @ TC=25°C (A)1.9
Typical Reverse Transfer Capacitance @ Vds (pF)2@25V
Description
Trans MOSFET N-CH 80V 0.33A 3-Pin(3+Tab) TO-237
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