Product Attribute | Attribute Value |
Tab | Tab |
PPAP | No |
EU RoHS | Not Compliant |
Mounting | Through Hole |
ECCN (US) | EAR99 |
Pin Count | 3 |
Automotive | No |
Lead Shape | Through Hole |
PCB changed | 3 |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Product Category | Power MOSFET |
Supplier Package | TO-237 |
Maximum IDSS (uA) | 10 |
Standard Package Name | TO-237 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 1000 |
Maximum Gate Source Voltage (V) | ±30 |
Typical Output Capacitance (pF) | 35 |
Maximum Drain Source Voltage (V) | 80 |
Typical Gate Plateau Voltage (V) | 2.5 |
Maximum Gate Threshold Voltage (V) | 2 |
Minimum Gate Threshold Voltage (V) | 0.8 |
Typical Gate Threshold Voltage (V) | 1.6 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 0.33 |
Operating Junction Temperature (°C) | -55 to 150 |
Typical Input Capacitance @ Vds (pF) | 35@25V |
Maximum Drain Source Resistance (MOhm) | 4000@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 30 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 1.9 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 2@25V |
Description |