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VQ2001P-E3
VQ2001P-E3
MOSFETs VQ2001P-E3
Vishay
VQ2001P-E3
--
Diodes, Transistors and Thyristors
MOSFETs
VQ2001P-E3.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
Pin Count14
AutomotiveNo
Lead ShapeThrough Hole
PCB changed14
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeP
ConfigurationQuad
Package Width7.11(Max)
Package Height3.81(Max)
Package Length19.3(Max)
Product CategoryPower MOSFET
Supplier PackagePDIP
Standard Package NameDIP
Number of Elements per Chip4
Maximum Power Dissipation (mW)2000
Maximum Gate Source Voltage (V)±20
Maximum Drain Source Voltage (V)30
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.6
Typical Input Capacitance @ Vds (pF)60@15V
Maximum Drain Source Resistance (mOhm)2000@12V
Description
Trans MOSFET P-CH Si 30V 0.6A 14-Pin PDIP
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