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QSB363CYR
QSB363CYR
Phototransistors QSB363CYR
onsemi
QSB363CYR
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Optoelectronics
Phototransistors
QSB363CYR.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeIR Chip
EU RoHSCompliant
MaterialSilicon
PolarityNPN
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveNo
Lens ColorClear
Part StatusObsolete
Lens Shape TypeDomed
Viewing OrientationTop View
Peak Wavelength (nm)940
Phototransistor TypePhototransistor
Fabrication TechnologyNPN Transistor
Maximum Fall Time (ns)15000(Typ)
Maximum Rise Time (ns)15000(Typ)
Maximum Dark Current (nA)100
Maximum Light Current (uA)1500(Typ)
Number of Channels per Chip1
Maximum Collector Current (mA)2
Maximum Power Dissipation (mW)75
Half Intensity Angle Degrees (°)12
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-25
Maximum Collector-Emitter Voltage (V)30
Maximum Emitter-Collector Voltage (V)5
Maximum Collector-Emitter Saturation Voltage (V)0.4
Description
Phototransistor IR Chip Silicon 940nm T/R
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