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BPW96B
BPW96B
Phototransistors BPW96B
Vishay
BPW96B
--
Optoelectronics
Phototransistors
BPW96B.pdf
Specification
Product AttributeAttribute Value
HTS8541497080
PPAPNo
TypeIR Chip
EU RoHSCompliant
Diameter5.75
MaterialSilicon
MountingThrough Hole
PolarityNPN
ECCN (US)EAR99
PackagingBulk
Pin Count2
AutomotiveNo
Lead ShapeThrough Hole
Lens ColorClear
PCB changed2
Part StatusActive
Package Height8.6
Lens Shape TypeDomed
Supplier PackageT-1 3/4
Viewing OrientationTop View
Peak Wavelength (nm)850
Phototransistor TypePhototransistor
Standard Package NameT-1 3/4
Fabrication TechnologyNPN Transistor
Maximum Dark Current (nA)200
Maximum Light Current (uA)7500
Number of Channels per Chip1
Maximum Collector Current (mA)50
Maximum Power Dissipation (mW)150
Half Intensity Angle Degrees (°)40
Maximum Operating Temperature (°C)100
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)70
Maximum Emitter-Collector Voltage (V)5
Maximum Collector-Emitter Saturation Voltage (V)0.3
Description
Phototransistor IR Chip Silicon 850nm 2-Pin T-1 3/4 Bulk
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