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QSB373ZR
QSB373ZR
Phototransistors QSB373ZR
onsemi
QSB373ZR
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Optoelectronics
Phototransistors
QSB373ZR.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeIR Chip
EU RoHSCompliant
MaterialSilicon
PolarityNPN
ECCN (US)EAR99
PackagingBulk
AutomotiveNo
Lens ColorBlack Transparent
Part StatusObsolete
Cut-Off FilterVisible Cut-off
Lens Shape TypeDomed
Viewing OrientationTop View
Peak Wavelength (nm)940
Phototransistor TypePhototransistor
Fabrication TechnologyNPN Transistor
Maximum Fall Time (ns)15000(Typ)
Maximum Rise Time (ns)15000(Typ)
Maximum Dark Current (nA)100
Maximum Light Current (uA)1500(Typ)
Number of Channels per Chip1
Maximum Collector Current (mA)2
Maximum Power Dissipation (mW)75
Half Intensity Angle Degrees (°)24
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)30
Maximum Emitter-Collector Voltage (V)5
Maximum Collector-Emitter Saturation Voltage (V)0.4
Description
Phototransistor IR Chip Silicon 940nm Bulk
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