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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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QSC114
QSC114
Phototransistors QSC114
onsemi
QSC114
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Optoelectronics
Phototransistors
QSC114.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeIR Chip
EU RoHSCompliant
Diameter3.94
MaterialSilicon
MountingThrough Hole
PolarityNPN
ECCN (US)EAR99
PackagingBulk
Pin Count2
AutomotiveNo
Lens ColorBlack Transparent
PCB changed2
Part StatusObsolete
Package Height5.66
Lens Shape TypeDomed
Supplier PackageT-1
Viewing OrientationTop View
Peak Wavelength (nm)880
Phototransistor TypePhototransistor
Fabrication TechnologyNPN Transistor
Maximum Fall Time (ns)5000(Typ)
Maximum Rise Time (ns)5000(Typ)
Maximum Dark Current (nA)100
Maximum Light Current (uA)4000(Min)
Number of Channels per Chip1
Maximum Collector Current (mA)9
Maximum Power Dissipation (mW)100
Half Intensity Angle Degrees (°)4
Maximum Operating Temperature (°C)100
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)30
Maximum Emitter-Collector Voltage (V)5
Maximum Collector-Emitter Saturation Voltage (V)0.4
Description
No Phototransistor IR Chip Silicon 880nm 2-Pin T-1 Bulk
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