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QSE243
QSE243
Phototransistors QSE243
onsemi
QSE243
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Optoelectronics
Phototransistors
QSE243.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeIR Chip
EU RoHSCompliant
MaterialSilicon
MountingThrough Hole
PolarityNPN
ECCN (US)EAR99
PackagingBulk
Pin Count2
AutomotiveNo
Lead ShapeThrough Hole
Lens ColorClear
PCB changed2
Part StatusObsolete
Package Width2.26
Package Height5.71
Package Length4.44
Lens Shape TypeDomed
Supplier PackageThin Side Looker
Viewing OrientationSide View
Peak Wavelength (nm)880
Phototransistor TypePhototransistor
Standard Package NameSide Looker
Fabrication TechnologyNPN Transistor
Maximum Fall Time (ns)15000(Typ)
Maximum Rise Time (ns)15000(Typ)
Maximum Dark Current (nA)100
Number of Channels per Chip1
Maximum Power Dissipation (mW)100
Half Intensity Angle Degrees (°)50
Maximum Operating Temperature (°C)100
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)30
Maximum Emitter-Collector Voltage (V)5
Maximum Collector-Emitter Saturation Voltage (V)0.4
Description
Phototransistor IR Chip Silicon 880nm 2-Pin Thin Side Looker Bulk
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