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2SC5227A-4-TB-E
2SC5227A-4-TB-E
RF BJT 2SC5227A-4-TB-E
onsemi
2SC5227A-4-TB-E
--
Diodes, Transistors and Thyristors
RF BJT
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width1.65(Max)
Package Height1.25(Max)
Package Length3.05(Max)
Supplier PackageSC-59
Standard Package NameSC
Minimum DC Current Gain90@20mA@5V
Maximum Noise Figure (dB)1.8
Number of Elements per Chip1
Operational Bias Conditions5V/20mA
Minimum DC Current Gain Range50 to 120
Maximum Power Dissipation (mW)200
Typical Output Capacitance (pF)1.2(Max)
Maximum DC Collector Current (A)0.07
Maximum Emitter Base Voltage (V)2
Maximum Collector Base Voltage (V)20
Maximum Transition Frequency (MHz)7000(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Emitter Cut-Off Current (nA)10000
Maximum Collector-Emitter Voltage (V)10
Maximum Collector Cut-Off Current (nA)1000
Maximum DC Collector Current Range (A)0.06 to 0.12
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 10V 0.07A 200mW 3-Pin SC-59 T/R
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