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BF888E6327XT
BF888E6327XT
RF BJT BF888E6327XT
Infineon
BF888E6327XT
--
Diodes, Transistors and Thyristors
RF BJT
BF888E6327XT.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypeNPN
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
ConfigurationSingle Dual Emitter
Package Width1.25
Package Height0.9(Max)
Package Length2
Supplier PackageSOT-343
Standard Package NameSOT-343
Minimum DC Current Gain250(Typ)@25mA@3V
Typical Power Gain (dB)27
Maximum Noise Figure (dB)0.85(Typ)
Number of Elements per Chip1
Operational Bias Conditions3V/25mA
Minimum DC Current Gain Range200 to 300
Maximum Power Dissipation (mW)160
Typical Input Capacitance (pF)0.45
Typical Output Capacitance (pF)0.08
Maximum DC Collector Current (A)0.03
Maximum Emitter Base Voltage (V)1.2
Maximum Collector Base Voltage (V)13
Maximum Transition Frequency (MHz)47000(Typ)
Maximum Operating Temperature (°C)150
Maximum Power 1dB Compression (dBm)11(Typ)
Minimum Operating Temperature (°C)-55
Maximum Emitter Cut-Off Current (nA)10(Typ)
Maximum Collector-Emitter Voltage (V)4
Maximum Collector Cut-Off Current (nA)1(Typ)
Maximum DC Collector Current Range (A)0.001 to 0.06
Maximum 3rd Order Intercept Point (dBm)25(Typ)
Maximum Collector-Emitter Voltage Range (V)<20
Description
Trans RF BJT NPN 4V 0.03A 160mW 4-Pin(3+Tab) SOT-343 T/R
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